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| KSA1406 KSA1406 CRT Display, Video Output * High Current Gain Bandwidth Product : fT = 400MHz (Typ.) * High Collector-Base Breakdown Voltage : VCBO = -200V * Low Reverse Transfer Capacitance : Cre=1.7pF (Typ.) 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Ratings - 200 - 200 -4 - 100 - 200 1.2 7 150 - 55 ~ 150 Units V V V mA mA W W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(Sat) VBE(Sat) fT Cob Cre Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance Test Condition IC = - 10A, IB = 0 IC = - 1mA, RBE = IE = - 100A, IC = 0 VCB = - 150V, IC = 0 VBE = - 2V, IE = 0 VCE = - 10V, IC = - 10mA VCE = - 10V, IC = - 60mA IC = - 30mA, IC = - 3mA IC = - 30mA, IC = - 3mA VCE = - 30V, IC = - 30mA VCB = - 30V, f = 1MHz VCB = - 30V, f = 1MHz 400 2.3 1.7 40 20 Min. - 200 - 200 -4 - 0.1 - 0.1 120 - 0.8 - 1.8 V V MHz pF pF Typ. Max. Units V V V A A * hFE Classification Classification hFE1 C 40 ~ 80 D 60 ~ 120 (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1406 Typical Characteristics -50 IB = -500uA 1k IB = -450uA IC[A], COLLECTOR CURRENT -40 VCE = -10V IB = -400uA hFE, DC CURRENT GAIN -20 IB = -350uA IB = -300uA -30 100 IB = -250uA IB = -200uA -20 IB = -150uA 10 IB = -100uA -10 IB = -50uA IB = 0uA -0 -0 -4 -8 -12 -16 1 -0.1 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10 -120 VCE(sat)[V], SATURATION VOLTAGE Ic = 10 IB VCE = -10V -1 IC[mA], COLLECTOR CURRENT -1 -10 -100 -100 -80 -60 -0.1 -40 -20 -0.01 -0.1 -0 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 100 IE=0 f=1MHz f=1MHz Cob[pF], CAPACITANCE 10 Cre[pF], CAPACITANCE 10 1 1 0.1 -0.1 -1 -10 -100 0.1 -0.1 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE V CB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance Figure 6. Reverse Capacitance (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1406 Typical Characteristics (Continued) fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 1000 V CE = -30V IC[mA], COLLECTOR CURRENT IC(Pulse) MAX. 1m IC(DC) MAX. 100 10ms s TC=25 100 10 10 -1 -10 -100 1 1 10 100 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area 10 PC[W], POWER DISSIPATION 8 Tc 6 4 2 Ta 0 0 25 50 o 75 100 125 150 175 T[ C], TEMPERATURE Figure 9. Power Derating (c)2000 Fairchild Semiconductor International VCEOMax Rev. A, February 2000 KSA1406 Package Demensions TO-126 0.10 3.90 8.00 0.30 3.25 0.20 14.20MAX o3.20 0.10 11.00 0.20 (1.00) 0.75 0.10 1.60 0.10 0.75 0.10 0.30 (0.50) 1.75 0.20 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 13.06 16.10 0.20 0.50 -0.05 +0.10 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
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